SINO-IC-Single FETs, MOSFETs-SE60130G

Description

Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);105A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.274nF


60V 5.3mΩ@10V 1 N-channel 125W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);105A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);5.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);105A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.274nF


    60V 5.3mΩ@10V 1 N-channel 125W TO-263 Single FETs, MOSFETs RoHS

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