SINO-IC-Single FETs, MOSFETs-SE60210G

Description

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Type;N-Channel/RDS(on);2.2mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);63pF/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.07nF/Output Capacitance(Coss);2.14nF


60V 2.2mΩ@10V TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Type;N-Channel/RDS(on);2.2mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);63pF/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.07nF/Output Capacitance(Coss);2.14nF60V 2.2mΩ@10V TO-263 Single FETs, MOSFETs RoHS Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Type;N-Channel/RDS(on);2.2mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);63pF/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.07nF/Output Capacitance(Coss);2.14nF


    60V 2.2mΩ@10V TO-263 Single FETs, MOSFETs RoHS

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