SINO-IC-Single FETs, MOSFETs-SE80100G

Description

Drain to Source Voltage;80V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;4.12nF


N-Channel 80V 100A 125W Surface Mount TO-263

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$1.47 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;4.12nF


    N-Channel 80V 100A 125W Surface Mount TO-263

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