SINO-IC-Single FETs, MOSFETs-SE8090A

Description

Drain to Source Voltage;80V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.12nF/Output Capacitance(Coss);520pF


N-Channel 80V 90A 125W Through Hole TO-220

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.12nF/Output Capacitance(Coss);520pF


    N-Channel 80V 90A 125W Through Hole TO-220

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