SSGSEMI-TVS Diodes-ST4V5FBN102

Description

/Clamping Voltage;13V/Reverse Leakage Current (Ir);500nA/Peak Pulse Power Dissipation (Ppp);400W@8/20us/Reverse Stand-Off Voltage (Vrwm);4.5V/Voltage - Breakdown;5V/Operating temperature;-55℃~+125℃


13V 400W@8/20us 5V 4.5V DFN1006-2L TVS Diodes RoHS

Product form

/Clamping Voltage;13V/Reverse Leakage Current (Ir);500nA/Peak Pulse Power Dissipation (Ppp);400W@8/20us/Reverse Stand-Off Voltage (Vrwm);4.5V/Voltage - Breakdown;5V/Operating temperature;-55℃~+125℃13V 400W@8/20us 5V 4.5V DFN1006-2L TVS... Read more

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    Description

    /Clamping Voltage;13V/Reverse Leakage Current (Ir);500nA/Peak Pulse Power Dissipation (Ppp);400W@8/20us/Reverse Stand-Off Voltage (Vrwm);4.5V/Voltage - Breakdown;5V/Operating temperature;-55℃~+125℃


    13V 400W@8/20us 5V 4.5V DFN1006-2L TVS Diodes RoHS

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