Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;250ns/Low Level Delay Time;200ns/Operating Temperature;-45℃~+125℃/Fall Time;30ns/Rise Time;50ns/Current - Output High(IOH);400mA/Voltage - Supply;11.5V~14.6V/Current - Output Low(IOL);650mA/Features;Under... Read more

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