SUPSiC-Single FETs, MOSFETs-GC2M0040120D

Description

Drain to Source Voltage;1.2kV/Gate Charge(Qg);120nC/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);80mΩ@20V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;2.44nF/Output Capacitance(Coss);171pF


N-Channel 1.2kV 55A 278W Through Hole TO-247-3

Product form

Drain to Source Voltage;1.2kV/Gate Charge(Qg);120nC/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);80mΩ@20V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;2.44nF/Output... Read more

$23.64 Excl. VAT

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    Description

    Drain to Source Voltage;1.2kV/Gate Charge(Qg);120nC/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);80mΩ@20V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;2.44nF/Output Capacitance(Coss);171pF


    N-Channel 1.2kV 55A 278W Through Hole TO-247-3

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