SUPSiC-Single FETs, MOSFETs-GC2M0045170D

Description

Drain to Source Voltage;1.7kV/Gate Charge(Qg);188nC/Type;N-Channel/Pd - Power Dissipation;520W/RDS(on);45mΩ@20V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6.7pF/Current - Continuous Drain(Id);72A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;3.672nF/Output Capacitance(Coss);176pF


N-Channel 1.7kV 72A 520W Through Hole TO247-3

Product form

Drain to Source Voltage;1.7kV/Gate Charge(Qg);188nC/Type;N-Channel/Pd - Power Dissipation;520W/RDS(on);45mΩ@20V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6.7pF/Current - Continuous Drain(Id);72A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;3.672nF/Output... Read more

$72.66 Excl. VAT

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    Description

    Drain to Source Voltage;1.7kV/Gate Charge(Qg);188nC/Type;N-Channel/Pd - Power Dissipation;520W/RDS(on);45mΩ@20V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6.7pF/Current - Continuous Drain(Id);72A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;3.672nF/Output Capacitance(Coss);176pF


    N-Channel 1.7kV 72A 520W Through Hole TO247-3

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