SUPSiC-Single FETs, MOSFETs-GC2M0080120K

Description

Drain to Source Voltage;1.2kV/Gate Charge(Qg);71nC/Type;N-Channel/Pd - Power Dissipation;192W/RDS(on);98mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.13nF/Output Capacitance(Coss);92pF


N-Channel 1.2kV 36A 192W Through Hole TO-247-4

Product form

Drain to Source Voltage;1.2kV/Gate Charge(Qg);71nC/Type;N-Channel/Pd - Power Dissipation;192W/RDS(on);98mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.13nF/Output... Read more

$12.18 Excl. VAT

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    Description

    Drain to Source Voltage;1.2kV/Gate Charge(Qg);71nC/Type;N-Channel/Pd - Power Dissipation;192W/RDS(on);98mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.13nF/Output Capacitance(Coss);92pF


    N-Channel 1.2kV 36A 192W Through Hole TO-247-4

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