SUPSiC-Single FETs, MOSFETs-GC2M0160120K

Description

Drain to Source Voltage;1.2kV/Gate Charge(Qg);40nC/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);196mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;606pF/Output Capacitance(Coss);55pF


N-Channel 1.2kV 18A 125W Through Hole TO-247-4

Product form

Drain to Source Voltage;1.2kV/Gate Charge(Qg);40nC/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);196mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;606pF/Output... Read more

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    Description

    Drain to Source Voltage;1.2kV/Gate Charge(Qg);40nC/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);196mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;606pF/Output Capacitance(Coss);55pF


    N-Channel 1.2kV 18A 125W Through Hole TO-247-4

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