SUPSiC-Single FETs, MOSFETs-GC3M0015065D

Description

Drain to Source Voltage;650V/Gate Charge(Qg);188nC/Type;N-Channel/Pd - Power Dissipation;416W/RDS(on);15mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;5.011nF/Output Capacitance(Coss);289pF


N-Channel 650V 120A 416W Through Hole TO-247-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);188nC/Type;N-Channel/Pd - Power Dissipation;416W/RDS(on);15mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;5.011nF/Output... Read more

$36.66 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);188nC/Type;N-Channel/Pd - Power Dissipation;416W/RDS(on);15mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;5.011nF/Output Capacitance(Coss);289pF


    N-Channel 650V 120A 416W Through Hole TO-247-3

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