SUPSiC-Single FETs, MOSFETs-GC3M0021120D

Description

Drain to Source Voltage;1.2kV/Gate Charge(Qg);160nC/Type;N-Channel/Pd - Power Dissipation;469W/RDS(on);21mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);81A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.818nF/Output Capacitance(Coss);180pF


N-Channel 1.2kV 81A 469W Through Hole TO247-3

Product form

Drain to Source Voltage;1.2kV/Gate Charge(Qg);160nC/Type;N-Channel/Pd - Power Dissipation;469W/RDS(on);21mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);81A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.818nF/Output... Read more

$57.33 Excl. VAT

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    Description

    Drain to Source Voltage;1.2kV/Gate Charge(Qg);160nC/Type;N-Channel/Pd - Power Dissipation;469W/RDS(on);21mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);81A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.818nF/Output Capacitance(Coss);180pF


    N-Channel 1.2kV 81A 469W Through Hole TO247-3

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