SUPSiC-Single FETs, MOSFETs-GC3M0060065D

Description

Drain to Source Voltage;650V/Gate Charge(Qg);46nC/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);60mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.02nF/Output Capacitance(Coss);80pF


N-Channel 650V 29A 150W Through Hole TO247-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);46nC/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);60mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.02nF/Output... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);46nC/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);60mΩ@15V/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.02nF/Output Capacitance(Coss);80pF


    N-Channel 650V 29A 150W Through Hole TO247-3

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