SUPSiC-Single FETs, MOSFETs-GC3M0065090D

Description

Drain to Source Voltage;900V/Gate Charge(Qg);71nC/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);65mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;760pF/Output Capacitance(Coss);66pF


N-Channel 900V 36A 125W Through Hole TO247-3

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);71nC/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);65mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;760pF/Output... Read more

$16.92 Excl. VAT

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);71nC/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);65mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);36A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;760pF/Output Capacitance(Coss);66pF


    N-Channel 900V 36A 125W Through Hole TO247-3

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