SUPSiC-Single FETs, MOSFETs-GC3M0065100K

Description

Drain to Source Voltage;1kV/Gate Charge(Qg);37nC/Type;N-Channel/Pd - Power Dissipation;113.5W/RDS(on);65mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;760pF/Output Capacitance(Coss);70pF


N-Channel 1kV 32A 113.5W Through Hole TO-247-4

Product form

Drain to Source Voltage;1kV/Gate Charge(Qg);37nC/Type;N-Channel/Pd - Power Dissipation;113.5W/RDS(on);65mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;760pF/Output... Read more

$21.24 Excl. VAT

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    Description

    Drain to Source Voltage;1kV/Gate Charge(Qg);37nC/Type;N-Channel/Pd - Power Dissipation;113.5W/RDS(on);65mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;760pF/Output Capacitance(Coss);70pF


    N-Channel 1kV 32A 113.5W Through Hole TO-247-4

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