SUPSiC-Single FETs, MOSFETs-GC3M0120090D

Description

Drain to Source Voltage;900V/Gate Charge(Qg);21nC/Type;N-Channel/Pd - Power Dissipation;97W/RDS(on);120mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;414pF/Output Capacitance(Coss);48pF


N-Channel 900V 23A 97W Through Hole TO-247-3

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);21nC/Type;N-Channel/Pd - Power Dissipation;97W/RDS(on);120mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;414pF/Output... Read more

$17.46 Excl. VAT

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);21nC/Type;N-Channel/Pd - Power Dissipation;97W/RDS(on);120mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.1V/Ciss-Input Capacitance;414pF/Output Capacitance(Coss);48pF


    N-Channel 900V 23A 97W Through Hole TO-247-3

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