SUPSiC-Single FETs, MOSFETs-GC3M0280090D

Description

Drain to Source Voltage;900V/Gate Charge(Qg);9.7nC/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);320mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;204pF/Output Capacitance(Coss);26pF


N-Channel 900V 10.2A 45W Through Hole TO247-3

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);9.7nC/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);320mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;204pF/Output... Read more

$16.56 Excl. VAT

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);9.7nC/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);320mΩ@15V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;204pF/Output Capacitance(Coss);26pF


    N-Channel 900V 10.2A 45W Through Hole TO247-3

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