/Gate Charge(Qg);530pC@2.5V/Type;P-Channel/Pd - Power Dissipation;690mW/RDS(on);640mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);850mA/Gate Threshold Voltage (Vgs(th));1V640mΩ@4.5V 690mW SOT-323 Single FETs, MOSFETs RoHS Read more

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