/Gate Charge(Qg);78nC@10V/Pd - Power Dissipation;125W/RDS(on);3.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.6nF/Output Capacitance(Coss);1.26nF3.5mΩ@10V 125W Single FETs, MOSFETs RoHS Read more

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