/Gate Charge(Qg);21nC@10V/Pd - Power Dissipation;1.56W/RDS(on);200mΩ@10V/Operating Temperature -;-50℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.19nF/Output Capacitance(Coss);55pF200mΩ@10V 1.56W SOT-23 Single FETs, MOSFETs... Read more

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