Tagore Technology-Single FETs, MOSFETs-TP44440HB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);0.75nC/Number;2 N-Channel/Type;N-Channel/RDS(on);360mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.16pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;28pF/Output Capacitance(Coss);9pF


650V 360mΩ 2 N-Channel Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);0.75nC/Number;2 N-Channel/Type;N-Channel/RDS(on);360mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.16pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;28pF/Output Capacitance(Coss);9pF650V 360mΩ... Read more

$26.07 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);0.75nC/Number;2 N-Channel/Type;N-Channel/RDS(on);360mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.16pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;28pF/Output Capacitance(Coss);9pF


    650V 360mΩ 2 N-Channel Single FETs, MOSFETs RoHS

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