Taiwan Semiconductor-Single Diodes-GPAS1004

Description

Diode Configuration;1 Independent/Reverse Leakage Current (Ir);5uA/Voltage - Forward(Vf@If);1.1V@10A/Voltage - DC Reverse (Vr) (Max);400V/Current - Rectified;10A/Non-Repetitive Peak Forward Surge Current;150A/Operating Junction Temperature Range;-55℃~+150℃


150A 400V 1 Independent 1.1V@10A 10A TO-263AB(D2PAK) Single Diodes RoHS

Product form

Diode Configuration;1 Independent/Reverse Leakage Current (Ir);5uA/Voltage - Forward(Vf@If);1.1V@10A/Voltage - DC Reverse (Vr) (Max);400V/Current - Rectified;10A/Non-Repetitive Peak Forward Surge Current;150A/Operating Junction... Read more

$1.59 Excl. VAT

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    Description

    Diode Configuration;1 Independent/Reverse Leakage Current (Ir);5uA/Voltage - Forward(Vf@If);1.1V@10A/Voltage - DC Reverse (Vr) (Max);400V/Current - Rectified;10A/Non-Repetitive Peak Forward Surge Current;150A/Operating Junction Temperature Range;-55℃~+150℃


    150A 400V 1 Independent 1.1V@10A 10A TO-263AB(D2PAK) Single Diodes RoHS

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