Taiwan Semiconductor-Single Diodes-TUAR4DH

Description

Diode Configuration;1 Independent/Reverse Leakage Current (Ir);5uA/Voltage - Forward(Vf@If);1.4V@4A/Voltage - DC Reverse (Vr) (Max);200V/Current - Rectified;4A/Reverse Recovery Time (trr);150ns/Non-Repetitive Peak Forward Surge Current;90A/Operating Junction Temperature Range;-55℃~+150℃


90A 150ns 200V 1 Independent 1.4V@4A 4A Single Diodes RoHS

Product form

Diode Configuration;1 Independent/Reverse Leakage Current (Ir);5uA/Voltage - Forward(Vf@If);1.4V@4A/Voltage - DC Reverse (Vr) (Max);200V/Current - Rectified;4A/Reverse Recovery Time (trr);150ns/Non-Repetitive Peak Forward... Read more

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    Description

    Diode Configuration;1 Independent/Reverse Leakage Current (Ir);5uA/Voltage - Forward(Vf@If);1.4V@4A/Voltage - DC Reverse (Vr) (Max);200V/Current - Rectified;4A/Reverse Recovery Time (trr);150ns/Non-Repetitive Peak Forward Surge Current;90A/Operating Junction Temperature Range;-55℃~+150℃


    90A 150ns 200V 1 Independent 1.4V@4A 4A Single Diodes RoHS

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