Taiwan Semiconductor-Single FETs, MOSFETs-BSS123W RFG

Description

Drain to Source Voltage;100V/Gate Charge(Qg);2nC@10V/Number;1 N-channel/Pd - Power Dissipation;298mW/RDS(on);5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);160mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;30pF


100V 5Ω@10V 1 N-channel 298mW SOT-323 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);2nC@10V/Number;1 N-channel/Pd - Power Dissipation;298mW/RDS(on);5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);160mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);2nC@10V/Number;1 N-channel/Pd - Power Dissipation;298mW/RDS(on);5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);160mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;30pF


    100V 5Ω@10V 1 N-channel 298mW SOT-323 Single FETs, MOSFETs RoHS

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