Taiwan Semiconductor-Single FETs, MOSFETs-BSS84W RFG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);1.9nC@10V/Number;1 P-Channel/Pd - Power Dissipation;298mW/RDS(on);8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);140mA/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;37pF


60V 8Ω@10V 1 P-Channel 298mW SOT-323 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);1.9nC@10V/Number;1 P-Channel/Pd - Power Dissipation;298mW/RDS(on);8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);140mA/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);1.9nC@10V/Number;1 P-Channel/Pd - Power Dissipation;298mW/RDS(on);8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);140mA/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;37pF


    60V 8Ω@10V 1 P-Channel 298mW SOT-323 Single FETs, MOSFETs RoHS

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