Taiwan Semiconductor-Single FETs, MOSFETs-TQM025NB04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);3.5mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);443pF/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;6.676nF


40V 3.5mΩ@7V 1 N-channel 136W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);3.5mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);443pF/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);118nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);3.5mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);443pF/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;6.676nF


    40V 3.5mΩ@7V 1 N-channel 136W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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