/Gate Charge(Qg);37nC@10V/Pd - Power Dissipation;100W/RDS(on);4.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);113A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;3.572nF4.3mΩ@10V 100W Single FETs, MOSFETs RoHS Read more

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