Taiwan Semiconductor-Single FETs, MOSFETs-TQM130NB06CR RLG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W;83W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);10A;50A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;2.234nF


60V 13mΩ@10V 1 N-channel PDFNU-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W;83W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);10A;50A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

$1.56 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W;83W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);10A;50A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;2.234nF


    60V 13mΩ@10V 1 N-channel PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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