Taiwan Semiconductor-Single FETs, MOSFETs-TQM150NB04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);21mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);41A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.044nF/Output Capacitance(Coss);122pF


40V 21mΩ@7V 1 N-channel 56W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);21mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);41A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);21mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);41A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.044nF/Output Capacitance(Coss);122pF


    40V 21mΩ@7V 1 N-channel 56W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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