Taiwan Semiconductor-Single FETs, MOSFETs-TQM300NB06CR RLG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);42.3mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.009nF


60V 42.3mΩ@7V 1 N-channel 56W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);42.3mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);42.3mΩ@7V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.009nF


    60V 42.3mΩ@7V 1 N-channel 56W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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