Taiwan Semiconductor-Single FETs, MOSFETs-TSG65N190CR RVG

Description

/Gate Charge(Qg);2.2nC@6V/RDS(on);190mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.6V


190mΩ@6V Single FETs, MOSFETs RoHS

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/Gate Charge(Qg);2.2nC@6V/RDS(on);190mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.6V190mΩ@6V Single FETs, MOSFETs RoHS Read more

$13.38 Excl. VAT

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    Description

    /Gate Charge(Qg);2.2nC@6V/RDS(on);190mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.6V


    190mΩ@6V Single FETs, MOSFETs RoHS

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