Taiwan Semiconductor-Single FETs, MOSFETs-TSM018NA03CR RLG

Description

/Gate Charge(Qg);56nC@10V/Type;N-Channel/Pd - Power Dissipation;104W/RDS(on);2.4mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));2.5V


2.4mΩ@4.5V 104W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

/Gate Charge(Qg);56nC@10V/Type;N-Channel/Pd - Power Dissipation;104W/RDS(on);2.4mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));2.5V2.4mΩ@4.5V 104W PDFN-8(5x6) Single FETs, MOSFETs RoHS Read more

$45.00 Excl. VAT

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    Description

    /Gate Charge(Qg);56nC@10V/Type;N-Channel/Pd - Power Dissipation;104W/RDS(on);2.4mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));2.5V


    2.4mΩ@4.5V 104W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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