Taiwan Semiconductor-Single FETs, MOSFETs-TSM018NB03CR RLG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);194A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.252nF


30V 1.8mΩ@10V 1 N-channel 136W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);194A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.252nF30V 1.8mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);120nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);194A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.252nF


    30V 1.8mΩ@10V 1 N-channel 136W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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