Taiwan Semiconductor-Single FETs, MOSFETs-TSM019NH04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);89nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);47pF/Current - Continuous Drain(Id);35A;100A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;6.029nF


40V 1.9mΩ@10V 1 N-channel 150W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;40V/Gate Charge(Qg);89nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);47pF/Current - Continuous Drain(Id);35A;100A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);89nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);47pF/Current - Continuous Drain(Id);35A;100A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;6.029nF


    40V 1.9mΩ@10V 1 N-channel 150W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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