Taiwan Semiconductor-Single FETs, MOSFETs-TSM025NB04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);113nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W;136W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);332pF/Current - Continuous Drain(Id);24A;161A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.15nF


40V 2.5mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);113nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W;136W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);332pF/Current - Continuous Drain(Id);24A;161A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);113nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W;136W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);332pF/Current - Continuous Drain(Id);24A;161A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.15nF


    40V 2.5mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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