Taiwan Semiconductor-Single FETs, MOSFETs-TSM025NH04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);59nC@10V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);26A;100A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;3.794nF


40V 2.5mΩ@10V 1 N-channel 136W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);59nC@10V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);26A;100A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;3.794nF40V 2.5mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);59nC@10V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);26A;100A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;3.794nF


    40V 2.5mΩ@10V 1 N-channel 136W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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