Taiwan Semiconductor-Single FETs, MOSFETs-TSM026NA03CR RLG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);168A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.54nF


30V 3.3mΩ@4.5V 1 N-channel 125W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);168A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);168A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.54nF


    30V 3.3mΩ@4.5V 1 N-channel 125W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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