Taiwan Semiconductor-Single FETs, MOSFETs-TSM032NH04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;115W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);25A;81A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;2.896nF


40V 3.2mΩ@10V 1 N-channel 115W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;40V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;115W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);25A;81A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;115W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);25A;81A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;2.896nF


    40V 3.2mΩ@10V 1 N-channel 115W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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