Taiwan Semiconductor-Single FETs, MOSFETs-TSM033NB04LCR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;107W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);121A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.456nF


40V 3.3mΩ@10V 1 N-channel 107W PDFN-8(5.2x5.8) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;107W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);121A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;107W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);276pF/Current - Continuous Drain(Id);121A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.456nF


    40V 3.3mΩ@10V 1 N-channel 107W PDFN-8(5.2x5.8) Single FETs, MOSFETs RoHS

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