Taiwan Semiconductor-Single FETs, MOSFETs-TSM035NB04LCZ

Description

Drain to Source Voltage;40V/Gate Charge(Qg);111nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));2.5V


40V 4.2mΩ@4.5V 156W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);111nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));2.5V40V 4.2mΩ@4.5V 156W TO-220 Single... Read more

$12.54 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);111nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));2.5V


    40V 4.2mΩ@4.5V 156W TO-220 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account