/Gate Charge(Qg);110nC/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);4.2mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);157A/Gate Threshold Voltage (Vgs(th));2.5V4.2mΩ@4.5V 156W TO-220 Single FETs, MOSFETs RoHS Read more

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