Taiwan Semiconductor-Single FETs, MOSFETs-TSM038N03PQ33

Description

Drain to Source Voltage;30V/Gate Charge(Qg);48nC@10V/Type;N-Channel/Pd - Power Dissipation;39W/RDS(on);5.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);78A/Gate Threshold Voltage (Vgs(th));2.5V


30V 5.5mΩ@4.5V 39W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);48nC@10V/Type;N-Channel/Pd - Power Dissipation;39W/RDS(on);5.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);78A/Gate Threshold Voltage (Vgs(th));2.5V30V 5.5mΩ@4.5V 39W PDFN-8(3.1x3.1) Single... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);48nC@10V/Type;N-Channel/Pd - Power Dissipation;39W/RDS(on);5.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);78A/Gate Threshold Voltage (Vgs(th));2.5V


    30V 5.5mΩ@4.5V 39W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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