Taiwan Semiconductor-Single FETs, MOSFETs-TSM043NB04CZ

Description

Drain to Source Voltage;40V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);6.7mΩ@7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);223pF/Current - Continuous Drain(Id);124A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.928nF


40V 6.7mΩ@7V 1 N-channel 125W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);6.7mΩ@7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);223pF/Current - Continuous Drain(Id);124A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$3.66 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);74nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);6.7mΩ@7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);223pF/Current - Continuous Drain(Id);124A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.928nF


    40V 6.7mΩ@7V 1 N-channel 125W TO-220 Single FETs, MOSFETs RoHS

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