Taiwan Semiconductor-Single FETs, MOSFETs-TSM043NB04LCZ

Description

Drain to Source Voltage;40V/Gate Charge(Qg);76nC@10V/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);5.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);124A/Gate Threshold Voltage (Vgs(th));2.5V


40V 5.3mΩ@4.5V 125W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);76nC@10V/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);5.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);124A/Gate Threshold Voltage (Vgs(th));2.5V40V 5.3mΩ@4.5V 125W TO-220 Single... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);76nC@10V/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);5.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);124A/Gate Threshold Voltage (Vgs(th));2.5V


    40V 5.3mΩ@4.5V 125W TO-220 Single FETs, MOSFETs RoHS

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