Taiwan Semiconductor-Single FETs, MOSFETs-TSM051N04LCP

Description

Drain to Source Voltage;40V/Gate Charge(Qg);44.5nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);5.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);96A/Gate Threshold Voltage (Vgs(th));2.5V


40V 5.1mΩ@10V 89W TO-252(DPAK) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;40V/Gate Charge(Qg);44.5nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);5.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);96A/Gate Threshold Voltage (Vgs(th));2.5V40V 5.1mΩ@10V 89W TO-252(DPAK) Single... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);44.5nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);5.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);96A/Gate Threshold Voltage (Vgs(th));2.5V


    40V 5.1mΩ@10V 89W TO-252(DPAK) Single FETs, MOSFETs RoHS

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