Taiwan Semiconductor-Single FETs, MOSFETs-TSM052NB03CR

Description

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.5V


30V 8mΩ@4.5V 83W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.5V30V 8mΩ@4.5V 83W PDFN-8(5x6) Single... Read more

$5.40 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.5V


    30V 8mΩ@4.5V 83W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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