Taiwan Semiconductor-Single FETs, MOSFETs-TSM055N03EPQ56

Description

/Gate Charge(Qg);11.1nC@4.5V/Type;N-Channel/Pd - Power Dissipation;74W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V


5.5mΩ@10V 74W Single FETs, MOSFETs RoHS

Product form

/Gate Charge(Qg);11.1nC@4.5V/Type;N-Channel/Pd - Power Dissipation;74W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V5.5mΩ@10V 74W Single FETs, MOSFETs RoHS Read more

$5.10 Excl. VAT

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    Description

    /Gate Charge(Qg);11.1nC@4.5V/Type;N-Channel/Pd - Power Dissipation;74W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V


    5.5mΩ@10V 74W Single FETs, MOSFETs RoHS

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