Taiwan Semiconductor-Single FETs, MOSFETs-TSM055N03PQ56 RLG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;74W/RDS(on);8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.16nF


30V 8.5mΩ@4.5V 1 N-channel 74W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;74W/RDS(on);8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.16nF30V 8.5mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);11.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;74W/RDS(on);8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.16nF


    30V 8.5mΩ@4.5V 1 N-channel 74W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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