Taiwan Semiconductor-Single FETs, MOSFETs-TSM056NH04CR RLG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);27.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;78.9W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);18A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.942nF


40V 5.6mΩ@10V 1 N-channel 78.9W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);27.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;78.9W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);18A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);27.3nC@10V/Number;1 N-channel/Pd - Power Dissipation;78.9W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);18A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.942nF


    40V 5.6mΩ@10V 1 N-channel 78.9W PDFNU-8(5x6) Single FETs, MOSFETs RoHS

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