Taiwan Semiconductor-Single FETs, MOSFETs-TSM056NH04CV RGG

Description

Drain to Source Voltage;40V/Gate Charge(Qg);29nC@10V/Pd - Power Dissipation;34W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);16A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.828nF


40V 5.6mΩ@10V 34W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);29nC@10V/Pd - Power Dissipation;34W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);16A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.828nF40V... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);29nC@10V/Pd - Power Dissipation;34W/RDS(on);5.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);16A;54A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.828nF


    40V 5.6mΩ@10V 34W PDFN-8(3.1x3.1) Single FETs, MOSFETs RoHS

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